US Patent No: 5,672,523

Number of patents in Portfolio can not be more than 2000

Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment

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Abstract

The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.110-20T(T: film thickness of the positive type photoresist). The photoresist is subjected to a heat treatment prior to and after exposure, preferably the after-treatment being performed before developing. The anodic oxidation film is heat-treated after formation, to reduce the leak current.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.MOBARA-SHI CHIBA-KEN, JP2024

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsukawa, Yuka Mobara, JP 10 374
Matsumaru, Haruo Hinode-machi, JP 25 675
Sasano, Akira Hinode-machi, JP 48 1146
Shirahashi, Kazuo Mobara, JP 12 407
Tanaka, Yasuo Tokyo, JP 176 1308
Tsukada, Toshihisa Musashino, JP 49 1072
Tsutsui, Ken Yokohama, JP 24 419
Yamamoto, Hideaki Tokorozawa, JP 101 1225

Cited Art

Patent Info (Count) # Cites Year
 
SHARP KABUSHIKI KAISHA (3)
5,146,301 Terminal electrode structure of a liquid crystal panel display 24 1988
5,054,887 Active matrix type liquid crystal display 92 1989
5,155,564 Thin-film transistor array 12 1990
 
KABUSHIKI KAISHA TOSHIBA (2)
4,905,066 Thin-film transistor 97 1989
5,028,551 Electrode interconnection material, semiconductor device using this material and driving circuit substrate for display device 67 1990
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (2)
4,496,981 Video camera with a monitor 37 1984
4,775,549 Method of producing a substrate structure for a large size display panel and an apparatus for producing the substrate structure 30 1985
 
AZ ELECTRONIC MATERIALS USA CORP. (1)
4,885,232 High temperature post exposure baking treatment for positive photoresist compositions 16 1986
 
HITACHI, LTD. (1)
4,543,573 Display panel 28 1982
 
HOECHST CELANESE CORPORATION (1)
5,021,320 Polyamide containing the hexafluoroisopropylidene group with O-quinone diazide in positive working photoresist 27 1989
 
NEC CORPORATION (1)
4,990,460 Fabrication method for thin film field effect transistor array suitable for liquid crystal display 18 1990
 
NEC ELECTRONICS CORPORATION (1)
4,821,092 Thin film transistor array for liquid crystal display panel 70 1987
 
NIPPON TELEGRAPH AND TELEPHONE CORPORATION (1)
4,918,504 Active matrix cell 27 1988
 
OKI ELECTRIC INDUSTRY CO., LTD. (1)
5,070,379 Thin-film transistor matrix for active matrix display panel with alloy electrodes 36 1990
 
SEIKO PRECISION INC. (1)
5,034,340 Amorphous silicon thin film transistor array substrate and method for producing the same 23 1989
 
WHITE-CASTLE LLC (1)
5,142,390 MIM element with a doped hard carbon film 51 1990

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (7)
6,114,728 MIS semiconductor device having a tapered top gate and a capacitor with metal oxide dielectric material 22 1999
6,777,254 Semiconductor device and fabrication method thereof 25 2000
6,417,543 MIS semiconductor device with sloped gate, source, and drain regions 11 2000
6,984,551 MIS semiconductor device and method of fabricating the same 10 2002
7,569,854 Semiconductor device and fabrication method thereof 1 2004
RE43471 Method of manufacturing a semiconductor device 0 2004
7,351,624 MIS semiconductor device and method of fabricating the same 0 2006
 
LG DISPLAY CO., LTD. (3)
6,627,470 Array substrate for use in LCD device and method of fabricating same 4 2001
6,992,364 Array substrate for use in LCD device and method of fabricating same 1 2003
7,511,782 Liquid crystal display device and fabrication method having open gate/data pads with transparent conductive layer thereon to an edge thereof 0 2005
 
SAMSUNG DISPLAY CO., LTD. (3)
6,022,753 Manufacturing methods of liquid crystal displays 49 1998
RE38901 Manufacturing methods of liquid crystal displays 4 2002
RE41426 Manufacturing methods of liquid crystal displays 1 2005
 
GLOBALFOUNDRIES INC. (1)
6,903,007 Process for forming bottom anti-reflection coating for semiconductor fabrication photolithography which inhibits photoresist footing 2 1997
 
NEC CORPORATION (1)
6,048,795 Process of fabricating a semiconductor device having nitrogen-containing silicon layer and refractory metal layer 9 1997