One time programmable read only memory programmed by destruction of insulating layer
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United States of America Patent
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Oct 7, 1997
Grant Date -
N/A
app pub date -
May 30, 1996
filing date -
Jun 1, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A volatile storage device including a nonvolatile storage block. The nonvolatile storage block includes a plurality of memory cells arranged in the form of matrix at the intersections of bit lines and word lines. Each memory cell includes an address selecting transistor and a capacitor connected in series between each bit line and a cell plate line. Accordingly, additional information including production history, test results, and product information can be nonvolatily stored in the volatile storage device.
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