Method of alloying an interconnect structure with copper
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 14, 1997
Grant Date -
N/A
app pub date -
May 20, 1996
filing date -
May 20, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An interconnect structure (10) is formed by filling a dual damascene structure (12) with conductive material. A barrier layer (13) is formed to serve as a seed layer and to prevent the out-diffusion of copper. A discontinuous film (30) of islands (41) is used to dope the interconnect structure (10)with copper. A conductive layer (14) is formed to fill a first portion (21) and a second portion (22) of the damascene structure (12). An anneal step is performed to diffuse the copper into the conductive layer (14).
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully