Programming flash memory using strict ordering of states
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United States of America Patent
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Oct 14, 1997
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app pub date -
Dec 14, 1995
filing date -
Dec 14, 1995
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Abstract
A method for programming an array of memory cells wherein each cell may be placed in more than two states. The method comprises the steps of 1) selecting a plurality of different programming voltage levels wherein each programming voltage level is associated with a corresponding one of a plurality of states, and 2) applying a plurality of programming pulses to selected subsets of the array of memory cells, wherein each programming pulse has one of the programming voltage levels and one of a corresponding plurality of pulse widths such that each of the memory cells of a corresponding one of the selected subsets are programmed directly to a corresponding one of the plurality of states by a corresponding programming pulse.
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