Surface-micromachined symmetrical differential pressure sensor with electrodes patterned into multiple conducting areas
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United States of America Patent
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Oct 21, 1997
Grant Date -
N/A
app pub date -
Feb 12, 1996
filing date -
Feb 17, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention is related to a symmetrical capacitive differential pressure sensor formed by depositing onto a substrate (1) using the surface-micromachining methods of semiconductor device manufacturing technology. The sensor comprises the following, entirely from each other electrically insulated thin-film layers: an at least partially conducting sensing diaphragm (5) made from polysilicon and conducting counterelectrodes (3 and 7) adapted to both sides of the sensing diaphragm (5). According to the invention, said counter-electrodes (3 and 7) are made from polysilicon thin film and comprise at least one electrically conducting area.
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