Silicon transducer with composite beam
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United States of America Patent
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-
Oct 28, 1997
Grant Date -
N/A
app pub date -
Jan 18, 1996
filing date -
Mar 30, 1992
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A simox wafer includes substrate (1), simox silicon dioxide layer (2) and monocrystalline simox silicon layer (3). An additional silicon nitride layer (5) is deposited on top of silicon layer (3) to allow the fabrication of a monocrystalline beam (4) by selectively etching the dioxide layer (2). The thermal insulating property of the resultant beam (4) offers an ideal site for construction of thermocouples (29), light modulators (60) and active components such as p-n diodes (34), MOS transistors (47) and bipolar transistors.
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