Method of fabricating a semiconductor device
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United States of America Patent
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Nov 4, 1997
Grant Date -
N/A
app pub date -
Jun 17, 1996
filing date -
Jun 19, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
To minimize error in size and form a thick oxide layer as field insulating means in a narrow isolation region, a method of fabricating a semiconductor device is carried out as followings. A polysilicon layer 3 is formed on a silicon substrate 1. A silicon nitride layer 5 is then formed on the polysilicon layer 3. Thereafter, an aperture 7 is formed in the silicon nitride layer 5 and reaches the polysilicon layer. A silicon layer 9 is formed in the aperture 7 by epitaxial growth technique. The silicon layer 9 is selectively oxidized to form an oxide layer 10 as field insulating means. The silicon nitride layer 5 and a portion of the polysilicon layer 3 which was left unoxidized are removed. This makes it possible to form the desired thick oxide layer as field insulating means in a narrow region.
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