Reactive ion etched assisted gold post process
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United States of America Patent
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Nov 4, 1997
Grant Date -
N/A
app pub date -
Jan 27, 1995
filing date -
Jan 27, 1995
priority date (Note) -
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Abstract
A process to fabricate a specified height and cross-section of Microwave Monolithic Integrated Circuit gold posts comprising a patterned conductive substrate overlayed by an adhesive layer, a matrix layer, and a photoresist layer. Using photolithographic techniques, gold post locations are defined in the photoresist layer. m Gold post locations and cross-sections are defined in the matrix layer. The adhesive layer at the gold post locations is removed. The gold post locations are plated to form gold posts. The matrix is etched and the adhesive is dissolved.
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