Light-transmissive resin sealed semiconductor
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United States of America Patent
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Nov 4, 1997
Grant Date -
N/A
app pub date -
Apr 26, 1995
filing date -
Apr 30, 1994
priority date (Note) -
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Abstract
A light-transmissive resin sealed semiconductor is provided which is sealed at least at a light incident face of a photoelectric transducer with an organic polymer resin layer, which comprises a copolymer of ethylene and an unsaturated fatty acid ester. This light-transmissive resin sealed semiconductor has a surface layer which has high heat resistance, and low hygroscopicity, and does not liberate a free acid even in the presence of moisture. Thereby the semiconductor is prevented from deterioration of performances caused by the drop of the shunt resistance of the photovoltaic element under high humidity environment.
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