Method for forming an interconnect having a penetration limited contact structure for establishing a temporary electrical connection with a semiconductor die
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United States of America Patent
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Nov 11, 1997
Grant Date -
N/A
app pub date -
Feb 13, 1995
filing date -
Jun 4, 1991
priority date (Note) -
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Abstract
A method for forming an interconnect for establishing a temporary electrical connection with contact locations (e.g., bond pads) on a semiconductor die is provided. The interconnect includes a substrate (e.g., silicon) having raised contact members that correspond to the contact locations on the die. Each raised contact member includes one or more projections adapted to penetrate the contact locations on the die to a limited penetration depth. The raised contact member and projections are covered with a metal silicide layer formed using a salicide process. The metal silicide layer is in contact with conductive traces formed on the substrate of a highly conductive metal. Alternately the raised contact members and projections can be formed as a metal layer or as a bi-metal stack.
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