Multibit single cell memory element having tapered contact
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United States of America Patent
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Nov 11, 1997
Grant Date -
N/A
app pub date -
Apr 19, 1996
filing date -
Apr 19, 1996
priority date (Note) -
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Abstract
An electrically operated, directly overwritable, multibit, single-cell chalcogenide memory element with multibit storage capabilities and having at least one contact for supplying electrical input signals to set the memory element to a selected resistance value, the second contact tapering to a peak adjacent to the memory element. In this manner the tapered contact helps define the size and position of a conduction path through the memory element.
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