Method of making BiCMOS circuit
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United States of America Patent
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Nov 25, 1997
Grant Date -
N/A
app pub date -
Jun 25, 1996
filing date -
Jun 30, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of manufacturing an integrated circuit having a buried layer of a low doped type of conductivity (2) and a buried layer of a highly doped type of the same conductivity (3) by masking a substrate (1) so as to define open areas on the substrate where it is desired to provide the two buried layers and doping the open areas of the substrate with a low concentration of dopants to form the low doped type of buried layer (2) is formed. Then one open area where the low doped type of buried layer (2) is formed is masked and the other open area is doped with a high concentration of dopants to form the highly doped type of buried layer (3).
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