A termination for a high-temperature superconductive thin-film microwave device formed on the obverse side of a substrate with the reverse side of the substrate having a ground plane. The termination can include a thin-film resistor being integral with an operative component, with the substrate being a preselected dielectric substrate. The resistor can have an epitaxially-formed layer of molybdenum metal of a first preselected thickness on the obverse side, and an epitaxially-formed layer of titanium metal of a second preselected thickness thereon. The termination includes a epitaxially-formed thin-film capacitor integral with the resistor. The capacitor can have a layer of titanium metal formed on a portion of the obverse side with a layer of gold metal formed thereon. The substrate can be lanthanum aluminate, and the high-temperature superconductive film can be a yttrium-barium-copper-oxide film. The ground plane can be made of a high-temperature superconductive film and annealed gold.
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