Use of cobalt tungsten phosphide as a barrier material for copper metallization

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United States of America Patent

PATENT NO 5695810
SERIAL NO

08754600

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A technique for electrolessly depositing a CoWP barrier material on to copper and electrolessly depositing copper onto a CoWP barrier material to prevent copper diffusion when forming layers and/or structures on a semiconductor wafer.

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Patent Owner(s)

Patent OwnerAddress
CORNELL RESEARCH FOUNDATION INC (NY CORP )SUITE 105 20 THORNWOOD DRIVE ITHACA NY 14850

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dubin, Valery M Cupertino, CA 120 5339
Schacham-Diamand, Yosi Ithaca, NY 1 603
Ting, Chiu H Saratoga, CA 27 3732
Vasudev, Prahalad K Austin, TX 27 3747
Zhao, Bin Irvine, CA 405 7112

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