Micromechanical device having an improved beam
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United States of America Patent
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Dec 9, 1997
Grant Date -
N/A
app pub date -
Feb 27, 1995
filing date -
Feb 27, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An electrically addressable, integrated, monolithic, micromirror device (10) is formed by the utilization of sputtering techniques, including various metal and oxide layers, photoresists, liquid and plasma etching, plasma stripping and related techniques and materials. The device (10) includes a selectively electrostatically deflectable mass or mirror (12) of supported by one or more beams (18) formed by sputtering and selective etching. The beams (18) are improved by being constituted of an impurity laden titanium-tungsten layer (52) with an impurity such as nitrogen, which causes the beams to have lattice constant different from TiW. The improved beams (18) exhibit increased strength, and decreased relaxation and creep.
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