Reduced mode laser and method of fabrication
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United States of America Patent
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Dec 9, 1997
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N/A
app pub date -
Apr 19, 1996
filing date -
Apr 19, 1996
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Abstract
A reduced, lateral mode laser diode is fabricated using a self-aligning process which produces a well controlled weakly index-guided waveguide with strong current confinement. The structure includes ion implants for controlling current injection into the active region from the top of the ridge. The number of modes may be reduced to unity, resulting in a single lateral mode laser. A laser diode array is fabricated in the same way.
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