Method of forming a resist pattern
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United States of America Patent
Stats
-
Dec 16, 1997
Grant Date -
N/A
app pub date -
Jun 11, 1996
filing date -
Jun 13, 1995
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
To provide a method of forming a resist pattern in a readily controllable manner and at low costs, in a first exposure step, a resist layer is subject to exposure through a mask. In the next, first developing step, a stepped portion 4 is formed in the resist layer. In a second exposure step, the resist layer is again subject to exposure. At this time, phase shift by 180.degree. occurs in the stepped portion so as to allow some area of the resist layer along the step to be not subject to exposure. In the second developing step, the exposed area of the resist layer 2 is removed to form a resist pattern along the step. Accordingly, the present invention is less subject to diffraction than the case where a phase shifter is employed, and is able to form a resist pattern in a readily controllable manner and reduce fabrication costs.
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