Amorphous silicon carbide film and photovoltaic device using the same
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United States of America Patent
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Dec 23, 1997
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app pub date -
Mar 21, 1996
filing date -
Mar 23, 1995
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Abstract
In the present invention, the optical band gap Eg (eV) of an amorphous silicon carbide film has the following relationship with the content of hydrogen C.sub.H (at. %) and the content of carbon C.sub.C (at. %) in the film: Eg=a+bC.sub.H /100+cC.sub.C /100, where a, b, and c are respectively in the ranges of 1.54.ltoreq.a.ltoreq.1.60, 0.55.ltoreq.b.ltoreq.0.65, and -0.65.ltoreq.c.ltoreq.-0.55, whereby the defect density in the amorphous silicon carbide film can be significantly reduced.
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