Method for making an isolated sidewall capacitor having a compound plate electrode
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United States of America Patent
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-
Dec 30, 1997
Grant Date -
N/A
app pub date -
Jan 22, 1997
filing date -
Dec 22, 1995
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A capacitor structure is provided, with a first conductor on top of a substrate having at least one layer of dielectric material thereon; a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; and a third conductor formed in the second opening.
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