Importance

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Abstract

Cell circuitry in an array on a substrate includes a TFT or other structure with a series of two or more channels and with an intrachannel region between each pair of adjacent channels in the series. Each intrachannel region has a continuously distribution of dopant particles and the distribution of dopant particles in the intrachannel regions together controls reverse gate bias leakage current without significantly reducing ON current. The average dopant density in intrachannel regions can be sufficiently low to ensure that reverse gate bias leakage current is approximately constant across a range of reverse gate bias voltages. For applications such as light valve arrays, sensor arrays, and memory arrays in which each cell includes a capacitive element for storing a level of charge in one of two or more voltage bands, the average dopant density of intrachannel regions can ensure that reverse gate bias leakage current is sufficiently low that a level of charge stored by the capacitive element remains within its voltage band during a storage period.

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First Claim