Etching method for refractory materials
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United States of America Patent
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Jan 6, 1998
Grant Date -
N/A
app pub date -
May 30, 1995
filing date -
May 30, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A plasma-assisted dry etching process for etching of a metal containing material layer on a substrate to remove the metal containing material from the substrate, comprising (i) plasma etching the metal containing material and, (ii) contemporaneously with said plasma etching, contacting the metal containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal containing material, in relation to a corresponding plasma etching of the metal containing material layer on the substrate in the absence of the etch enhancing reactant metal material being contacted with the etch enhancing reactant.
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