Bottom electrode structure for dielectric capacitors

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United States of America Patent

PATENT NO 5708302
SERIAL NO

08427897

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Abstract

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An integrated circuit capacitor (20) includes a bottom electrode structure (24) having an adhesion metal portion (34), a noble metal portion (36), and a second noble metal layer (40). A process of manufacture includes annealing the adhesion metal portion (34) and the noble metal portion (36) prior to the deposition of second noble metal layer (40) for purposes of forming barrier region (38). The electrode (24) preferably contacts metal oxide layer (26), which is made of a perovskite or perovskite-like layered superlattice material. A temporary capping layer (59) is formed and removed in manufacture, which serves to increase polarization potential from the device by at least 40%.

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Patent Owner(s)

Patent OwnerAddress
MATSUSHITA ELECTRIC INDUSTRIAL CO LTDOSAKA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Azuma, Masamichi Colorado Springs, CO 45 689
Cuchiaro, Joseph D Colorado Springs, CO 49 1110
Paz, De Araujo Carlos A Colorado Springs, CO 168 4247

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