Bottom electrode structure for dielectric capacitors

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5708302
SERIAL NO

08427897

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An integrated circuit capacitor (20) includes a bottom electrode structure (24) having an adhesion metal portion (34), a noble metal portion (36), and a second noble metal layer (40). A process of manufacture includes annealing the adhesion metal portion (34) and the noble metal portion (36) prior to the deposition of second noble metal layer (40) for purposes of forming barrier region (38). The electrode (24) preferably contacts metal oxide layer (26), which is made of a perovskite or perovskite-like layered superlattice material. A temporary capping layer (59) is formed and removed in manufacture, which serves to increase polarization potential from the device by at least 40%.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.OSAKA10842
SYMETRIX CORPORATIONCOLORADO SPRINGS, CO98

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Azuma, Masamichi Colorado Springs, CO 45 673
Cuchiaro, Joseph D Colorado Springs, CO 49 1089
Paz, De Araujo Carlos A Colorado Springs, CO 166 3779

Cited Art Landscape

Patent Info (Count) # Cites Year
 
WEEDEN CAPITAL PARTNERS, L.P., 180 MAIDEN LANE, NEW YORK, NEW YORK 10038 (1)
* 5046043 Ferroelectric capacitor and memory cell including barrier and isolation layers 165 1987
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
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ROUND ROCK RESEARCH, LLC (8)
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* Cited By Examiner