Method for writing multiple value into nonvolatile memory in an equal time
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United States of America Patent
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Jan 13, 1998
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N/A
app pub date -
Oct 1, 1996
filing date -
Feb 1, 1996
priority date (Note) -
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Abstract
There is provided a method for writing a multiple value into a nonvolatile memory capable of writing multiple value data into a floating gate type memory cell in an equal time even when the data are varied. With a specified voltage applied to a control gate of a memory cell, a drain voltage which is varied according to each of data values '11', '10' and '01' to a drain so that a write time required for setting a varied threshold voltage is equalized. By moving electrons between a floating gate and a drain through a gate insulating film, the threshold voltage of the memory cell is set.
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