Compound semi-conductors and controlled doping thereof
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United States of America Patent
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Jan 20, 1998
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N/A
app pub date -
Nov 6, 1995
filing date -
Jan 25, 1993
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Abstract
A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth chamber to affect the demand of particular growth sites within the growing crystal thereby controlling impurity incorporation into the growth sites.
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