Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes
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United States of America Patent
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Jan 27, 1998
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app pub date -
Jun 6, 1995
filing date -
Jun 6, 1995
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Abstract
An apparatus for improving dose uniformity in the PLAsma Doping (PLAD) ion implantation of a target material is described. By providing means for simultaneously biasing both the electrode, upon which the target is disposed, and a separately biasable concentric structure introduced about the electrode and sufficiently close to the target, together with means for adjustable bias variation between the electrode and the structure one can sufficiently adjust the shape of the implantation plasma, e.g. induced electric field and plasma sheath thickness, in order to effectively provide a uniform dose distribution during PLAD ion implantation processes.
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