Semiconductor device including active matrix circuit
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United States of America Patent
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Jan 27, 1998
Grant Date -
N/A
app pub date -
Mar 10, 1997
filing date -
Jun 13, 1994
priority date (Note) -
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Abstract
A combination of a doping process and the use of side walls which allows the source and drain of a thin film transistor of an active matrix circuit to be doped with only one of N-type and P-type impurities and which allows the source and drain of a thin film transistor used in a peripheral circuit of the same conductivity type as that of the thin film transistor of the active matrix circuit to include both of N-type and P-type impurities. Also, a thin film transistor in an active matrix circuit has offset regions by using side walls, and another thin film transistor in a peripheral circuit has a lightly doped region by using side walls.
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