Graded-channel semiconductor device
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United States of America Patent
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Jan 27, 1998
Grant Date -
N/A
app pub date -
Oct 10, 1995
filing date -
Oct 10, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A graded-channel semiconductor device (10) includes a substrate region (11) having a major surface (12). A source region (13) and a drain region (14) are formed in the substrate region (11) and are spaced apart to form a channel region (16). A doped region (18) is formed in the channel region (16) and is spaced apart from the source region (13), the drain region (14), and the major surface (12). The doped region (18) has the same conductivity type as the channel region (16), but has a higher dopant concentration. The device (10) exhibits an enhanced punch-through resistance and improved performance compared to prior art short channel structures.
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