Bias scheme of program inhibit for random programming in a nand flash memory
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United States of America Patent
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Feb 3, 1998
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app pub date -
Jul 24, 1996
filing date -
Jul 24, 1996
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Abstract
The present invention is a system and method which allows random programming and avoids the problem with band-to-band tunneling current discussed above. In particular, the present invention applies a predetermined voltage along the wordlines adjacent to the programming wordline. A method of programming in a Flash memory system includes providing a first wordline coupled with a first device desired to be programmed, the first wordline also coupled with a second device desired to be program inhibited; electrically isolating the second device; programming the first device; and programming a third device coupled with a second wordline, the second wordline not being adjacent to the first wordline.
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