Growing method of gallium nitride related compound semiconductor crystal and gallium nitride related compound semiconductor device
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United States of America Patent
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Feb 10, 1998
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Dec 6, 1995
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Apr 8, 1994
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Abstract
In a method of growing a gallium nitride related compound semiconductor crystal on a single crystal substrate, the {011} plane or the {101} plane of rare earth group 13 (3B) perovskite is used as the single crystal substrate. As a result, a gallium nitride group semiconductor crystal excellent in crystallinity can be grown epitaxially.
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