Field programmable gate array having reproducible metal-to-metal amorphous silicon antifuses
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United States of America Patent
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Feb 10, 1998
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Oct 13, 1994
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Sep 7, 1989
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Abstract
A field programmable gate array has a programmable interconnect structure comprising metal signal conductors and metal-to-metal PECVD amorphous silicon antifuses. The metal-to-metal PECVD amorphous silicon antifuses have an unprogrammed resistance of at least 550 megaohms and a programmed resistance of under 200 ohms.
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