Method for anisotropic etching conductive film
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United States of America Patent
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Feb 17, 1998
Grant Date -
N/A
app pub date -
Nov 22, 1995
filing date -
Nov 25, 1994
priority date (Note) -
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Abstract
In producing a semiconductor device having GOLD structure, a conductive film containing mainly silicon, tungsten, or/and molybdenum is etched by anisotropic etching using halogen fluoride (such as ClF, ClF.sub.3, BrF, BrF.sub.3, IF, and IF.sub.3) as an etching gas, without producing plasma. In this anisotropic etching, a chamber is maintained to obtain a high vacuum state. Molecular beams of halogen fluoride generated by an evaporator is irradiated into the substrate in a vertical direction (right angle) substantially to the substrate, in order to increase the degree of vertical etching to the substrate than that of horizontal etching. The halogen fluoride are excited by using the RF coil and the RF power source to promote etching.
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