Method of forming a complex film over a substrate having a specifically selected work function
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United States of America Patent
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Feb 17, 1998
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N/A
app pub date -
Jun 7, 1995
filing date -
Jan 19, 1994
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Abstract
Disclosed is a method and an apparatus for making devices with low barrier height. In fabricating an n-channel and p-channel devices, hemisphere grains, silicon crystal grains and metal silicide crystal grains are formed on a contact-hole or a gate electrode on an insulating film in each semiconductor element, so that it becomes possible to control the work function, to reduce the contact resistance, and to control the threshold voltage V.sub.th.
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