Method of making a semiconductor substrate having gettering effect
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United States of America Patent
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Feb 24, 1998
Issued Date -
N/A
app pub date -
Jun 24, 1996
filing date -
Sep 21, 1992
priority date (Note) -
Expired
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Abstract
The present invention is mainly characterized in that a semiconductor substrate improved so as to maintain a gettering effect for a long time can be obtained. A polycrystalline silicon film is formed on the rear surface of a semiconductor substrate. A silicon oxide film and silicon nitride film are formed over the rear surface of semiconductor substrate so as to cover polycrystalline silicon film.
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