Efficient CMOS amplifier with increased transconductance
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United States of America Patent
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Feb 24, 1998
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N/A
app pub date -
Feb 7, 1996
filing date -
Feb 7, 1996
priority date (Note) -
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Abstract
An RF IC having an improved transconductance comprises a first active device of a first conductance type having a gate, a drain and a source and a second active device of a second conductance type having a gate, a drain and a source. The second active device is coupled in series with the first active device. The gate of the first active device is coupled to the gate of the second active device. A current reuse circuit is coupled to the first active device and the second active device wherein a current flowing from the drain of the first active device is reused in the second active device. Whereby transconductance is increased without an increased current utilization and without an increase in noise.
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