Static Semiconductor memory device
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United States of America Patent
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Mar 3, 1998
Grant Date -
N/A
app pub date -
Jan 13, 1997
filing date -
Jun 18, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Sense circuits are provided correspondingly to bit line pairs provided corresponding to memory cell columns, respectively. The sense circuit senses, amplifies and latches storage data of the selected memory cell, and information latched by the sense amplifier is rewritten into the selected memory cell after selection of the memory cell. Thereby, destruction of storage information of the memory cell is prevented.
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