Process of fabricating dynamic random access memory device having storage capacitor low in contact resistance and small in leakage current through tantalum oxide film
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United States of America Patent
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Mar 10, 1998
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N/A
app pub date -
Nov 28, 1995
filing date -
Nov 29, 1994
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Abstract
When tantalum oxide is used for a dielectric film of a stacked type storage capacitor forming a memory cell together with a switching transistor, heat treatments are limited to 530 degrees centigrade in the stages after the deposition of the tantalum oxide, and leakage current across the tantalum oxide is drastically decreased.
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