Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
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United States of America Patent
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Mar 10, 1998
Grant Date -
N/A
app pub date -
Jan 27, 1995
filing date -
Jan 27, 1995
priority date (Note) -
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Abstract
What is described in the present specification are accelerometers using tiny proof masses and piezoresistive force detection. Conventional wisdom would indicate that this approach would not yield useful sensors. However, in fact, according to the invention, such devices are suitable in a wide range of applications. The devices may include deformable hinges to allow the fabrication of three dimensional structures. A new system has been developed which etches silicon highly selectively at moderate temperatures and without hydrodynamic forces potentially damaging to small structures and features. The system is based on the use of the gas phase etchant xenon diflouride, which is an unremarkable white solid at standard temperature and pressure.
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