Protection of aluminum metallization against chemical attack during photoresist development
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United States of America Patent
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-
Mar 24, 1998
Grant Date -
N/A
app pub date -
Oct 15, 1996
filing date -
Oct 21, 1992
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A conductive layer in a semiconductor device is protected against chemical attack by a photoresist developer by forming a protective film overlying the conductive layer. The protective film is formed using a chemical reaction that occurs through defects in a passivation layer that was previously formed overlying the conductive layer. The chemical reaction substantially occurs at the surface of the conductive layer and chemically converts portions thereof in forming the protective film. Preferably, the conductive layer is aluminum or an alloy thereof containing copper and/or silicon, and the protective film is aluminum oxide formed on the aluminum layer to protect it from corrosion by tetramethyl ammonium hydroxide (TMAH). The passivation layer is TiN, and the chemical reaction used is oxidation of the aluminum layer through defects in the overlying TiN layer by placing in an ozone asher.
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