Semiconductor wafer for epitaxially grown devices having a sub-surface getter region
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United States of America Patent
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Mar 31, 1998
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app pub date -
Apr 24, 1996
filing date -
Mar 30, 1993
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Abstract
In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.
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