Sputtering target
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United States of America Patent
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Apr 7, 1998
Grant Date -
N/A
app pub date -
Mar 26, 1996
filing date -
Mar 31, 1995
priority date (Note) -
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status (Latency Note)
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Abstract
A sputtering target contains a target material including as constituent elements Ag, In, Te and Sb with the respective atomic percents (atom. %) of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 0.5.ltoreq..alpha.<8, 5.ltoreq..beta..ltoreq.23, 17.ltoreq..gamma..ltoreq.38, 32.ltoreq..delta..ltoreq.73, .alpha..ltoreq..beta., and .alpha.+.beta.+.gamma.+.delta.=100, and a method of producing the above sputtering target is provided. An optical recording medium includes a recording layer containing a phase-change recording material which includes as constituent elements Ag, In, Te and Sb with the respective atomic percents of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 1.ltoreq..alpha.<6, 7.ltoreq..beta..ltoreq.20, 20.ltoreq..gamma..ltoreq.35, 35.ltoreq..delta..ltoreq.70, and .alpha.+.beta.+.gamma.+.delta.=100, and is capable of recording and erasing information by utilizing the phase change of the recording material in the recording layer. A method of forming the above recording layer for the optical recording medium is also provided. In addition, there is provided an optical recording method using the above-mentioned phase-change optical recording medium.
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