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Abstract

A semiconductor memory device comprising a silicon substrate, a plurality of switching transistors formed on the silicon substrate, an insulating layer having an opening and formed on a surface portion of the silicon substrate where the plurality of switching transistors formed, and a plurality of capacitors for accumulating electric charge formed on the insulating layer and connected respectively to the switching transistors via a conductive film buried in the opening of insulating layer, wherein each of the capacitors for accumulating electric charge is provided with an underlying crystal layer formed on the insulating layer and with a dielectric film consisting essentially of a ferroelectric material and epitaxially or orientationaly grown on the underlying crystal layer, and the switching transistors and the capacitors for accumulating electric charge connected to each other constitute a plurality of memory cells arranged in a two-dimensional pattern.

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First Claim