Semiconductor device having improved surface evenness
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United States of America Patent
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Apr 14, 1998
Issued Date -
N/A
app pub date -
Jun 1, 1995
filing date -
Sep 7, 1990
priority date (Note) -
Expired
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Abstract
A semiconductor device is constructed to have an insulating layer containing an impurity provided upon a semiconductor substrate. This insulating layer contains a plurality of windows of different sizes. A first layer is provided in the windows. This first layer does not extend over a periphery of the windows to the surface of the insulating layer. Further, this semiconductor device is constructed such that the surface of the insulating layer and the first layer opposite the semiconductor substrate are flat. In addition, the semiconductor substrate in contact with the first layer also contains the impurity. The semiconductor device, having less surface unevenness that a conventional device, provides both improved and greater stability of device properties.
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