Method for manufacturing DRAM device using high dielectric constant

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5741722
SERIAL NO

08698520

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor device capacitor structure comprises a semiconductor substrate having an impurity diffusion region; an insulating layer formed on the semiconductor substrate and having a contact hole on the impurity diffusion region; a first lower electrode of a half ring type formed on the insulating film along an upper edge of the contact hole; a second lower electrode formed on a surface of the substrate exposed through the contact hole, a wall of the contact hole, and the first lower electrode; a dielectric layer formed on the first and second lower electrodes; and an upper electrode formed on the dielectric layer. This structure increases capacitance, thereby improving the characteristics and reliability of the device.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
LG Semicon Co., Ltd.CHUNGCHEONGBUK-DO592

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Chang Jae Chungcheongbuk-do, KR 42 547

Cited Art Landscape

Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (1)
* 5335138 High dielectric constant capacitor and method of manufacture 255 1993
 
TEXAS INSTRUMENTS INCORPORATED (1)
* 5504041 Conductive exotic-nitride barrier layer for high-dielectric-constant materials 175 1994
 
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (1)
* 5223448 Method for producing a layered capacitor structure for a dynamic random access memory device 50 1991
 
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (1)
* 5270238 Method of making a semiconductor memory device having a double-stacked capacitor structure 11 1992
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
ADVANCED MICRO DEVICES, INC. (1)
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TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (2)
* 6004859 Method for fabricating a stack capacitor 10 1999
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INFINEON TECHNOLOGIES AG (2)
7112507 MIM capacitor structure and method of fabrication 2 2003
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ROUND ROCK RESEARCH, LLC (3)
* 5940676 Scalable high dielectric constant capacitor 18 1997
* 6737696 DRAM capacitor formulation using a double-sided electrode 7 1998
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Ultrasource, Inc. (8)
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* 2004/0080,021 Integrated thin film capacitor/inductor/interconnect system and method 15 2003
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* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
UNITED MICROELECTRONICS CORP. (4)
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GULA CONSULTING LIMITED LIABILITY COMPANY (1)
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* 6639288 Semiconductor device with a particular conductor arrangement 9 2000
 
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* 6583021 Method of fabricating capacitor having hafnium oxide 11 2002
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AISAWA TECHNOLOGIES, LLC (1)
* 6190962 Method of fabricating capacitor 2 1999
 
PROMOS TECHNOLOGIES INC. (1)
* 6077737 Method for forming a DRAM having improved capacitor dielectric layers 16 1998
 
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (1)
* 6242316 Semiconductor device having capacitor and method of fabricating the same 3 1999
* Cited By Examiner