MOS transistor with ramped gate oxide thickness and method for making same

United States of America Patent

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Apr 21, 1998
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Dec 17, 1996
filing date
Jun 27, 1996

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Abstract

The invention relates to a transistor having a ramped gate oxide thickness, a semiconductor device containing the same and a method for making a transistor.

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Patent Owner(s)

Patent Owner	Address
CYPRESS SEMICONDUCTOR CORPORATION	SAN JOSE CA

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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[Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Kachelmeier, Mark T	Austin, TX	3	139

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MOS transistor with ramped gate oxide thickness and method for making same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

08768883

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PATENT NO	5741737
SERIAL NO	08768883
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08768883

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