Method for fabricating a semiconductor device having a capacitor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 28, 1998
Issued Date -
N/A
app pub date -
Mar 19, 1997
filing date -
May 11, 1994
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device wherein an effective surface area is secured within a contact hole and wherein a storage electrode with rectangular corners is exactly patterned. The effective surface area within a contact hole can be obtained by overlapping the storage electrode contact hole with a portion of the storage electrode, so as to ensure more capacitance. Rounding of the corner of the rectangular storage electrode, which directs the resulting storage electrode to diminish in effective surface area, can be prevented by the different position of the storage electrode mask at the contact hole from one row or column to next, so as to make no difference between the patterned storage electrode and the designed one.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully