Method for fabricating a semiconductor device having copper layer
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United States of America Patent
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Apr 28, 1998
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N/A
app pub date -
Apr 23, 1997
filing date -
Aug 26, 1996
priority date (Note) -
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Abstract
A semiconductor device comprises a plurality of transistors A semiconductor device comprising a plurality of transistors formed on a semiconductor substrate and a metal interconnection layer connected to at least one of the transistors, wherein the metal interconnection layer is composed of a single layer or multi layers, the single layer or at least one layer of the multi layers being formed of copper or a copper alloy, and is connected to at least one transistor wholly or partially through a barrier layer; and at least one of the transistor is controlled on its threshold voltage by a selective ion implantation after formation of the metal interconnection layer.
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