Semiconductor device having a ferroelectric memory element with a lower electrode provided with an oxygen barrier
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United States of America Patent
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Apr 28, 1998
Grant Date -
N/A
app pub date -
Oct 3, 1995
filing date -
Oct 4, 1994
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Expired
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Abstract
A semiconductor device includes a semiconductor body (3) with a semiconductor element (1) with an electrically conducting region (5) on which a capacitor (2) forming a memory element is present with a lower electrode (11), an oxidic ferroelectric dielectric (12), and an upper electrode (13), which lower electrode (11) makes electrical contact with the conducting region (5) and includes a layer with a conductive metal oxide (112) and a layer (111) including platinum. The layer with the conductive metal oxide (112) acts as an oxygen barrier during manufacture. The invention also relates to a method of manufacturing such a semiconductor device. The device is characterized in that the layer including platinum (111) contains more than 15 atom % of a metal capable of forming a conductive metal oxide, and in that the layer (112) with the conductive metal oxide is present between the layer (111) comprising platinum and the ferroelectric dielectric (12). A good electrical contact between the lower electrode (11) and the conducting region (5) after manufacture is achieved thereby.
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Patent Owner(s)
- U.S. PHILIPS CORPORATION
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Kemperman, Johanna HHM | Eindhoven, NL | 1 | 45 |
Wolters, Robertus AM | Eindhoven, NL | 5 | 85 |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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