Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp
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United States of America Patent
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Apr 28, 1998
Issued Date -
N/A
app pub date -
May 15, 1996
filing date -
May 15, 1996
priority date (Note) -
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Abstract
An N-channel power MOSFET is fabricated with its source and body connected together and biased at a positive voltage with respect to its drain. The gate is controlled by a switch which alternately connects the gate to the source or to a voltage which turns the channel of the MOSFET fully on. When the gate is connected to the source, the device functions as a 'pseudo-Schottky' diode which turns on at a lower voltage and provides a lower-resistance path than a conventional PN diode. When the gate is connected to the positive voltage the channel of the MOSFET is turned fully on. This MOSFET switch is particularly suitable for use as a synchronous rectifier in a power converter where it reduces the power loss and stored charge in the 'break before make' interval (i.e., the interval between the turn-off of the shunt switch and the turn-on of the synchronous rectifier).
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