Multi-layer film capacitor structures and method

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United States of America Patent

PATENT NO 5745335
SERIAL NO

08671057

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Abstract

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A multi-layer film capacitor structure has a bottom electrode layer on a monolithic substrate, intermediate pairs of layers of film electrode and dielectric material overlying the bottom electrode, and a top pair of layers of a film electrode and film dielectric overlying the intermediate pairs. The structure preferably has a mesa configuration, in which each electrode layer extends laterally beyond the periphery of the layers above it around the entire periphery of the device. Each electrode layer therefore has a top surface which is accessible at its projecting edge through a via, so that the electrodes can be accessed in any combination to permit any desired circuit connection. If desired the dielectric materials can have different frequency characteristics, allowing a single capacitor structure to be optimized for a filter. Either the bottom electrode or the top electrode or both can be grounded and capacitor connections can be made to intermediate layers, to reduce parasitic capacitance effects.

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Patent Owner(s)

Patent OwnerAddress
BLACKBERRY LIMITEDWATERLOO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Watt, Michael Man-Kuen North York, CA 2 82

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