Epitaxial wafer of gallium arsenide phosphide
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United States of America Patent
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May 12, 1998
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app pub date -
Feb 18, 1997
filing date -
Jul 28, 1992
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Abstract
In an epitaxial wafer of gallium arsenide phosphide, a single crystal substrate is provided thereon with a gallium arsenide phosphide layer with a varying mixed crystal ratio, a gallium arsenide phosphide layer with a constant mixed crystal ratio, and a nitrogen-doped gallium arsenide phosphide layer with a constant mixed crystal ratio. The nitrogen-doped gallium arsenide phosphide layer with a constant mixed crystal ratio has a carrier concentration of 3.times.10.sup.15 cm.sup.-3 or less.
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